preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM400DY-50H high power switching use insulated type i c ................................................................... 400a v ces ....................................................... 2500v insulated type 2-elements in a pack application inverters, converters, dc choppers, induction heating, dc to dc converters. CM400DY-50H hvigbt modules (high voltage insulated gate bipolar transistor modules) outline drawing & circuit diagram dimensions in mm g1 c2 g2 c2 e2 e2 circuit diagram g1 e1 e1 c1 114 57 0.25 57 0.25 130 e1 c2 e1 e2 c1 c2 e2(c1) cm 24.5 40 20 124 0.25 140 7.2 48.8 53.6 36.3 4 - m8 nuts 6 - 7 mounting holes 5 - m4 nuts g2 18 61.5 5 38 15 39.5 5.7 15 30 28 label hvigbt (high voltage insulated gate bipolar transistor) modules
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM400DY-50H high power switching use insulated type hvigbt modules (high voltage insulated gate bipolar transistor modules) maximum ratings (tj = 25 c) v ge = 0v v ce = 0v t c = 25 c pulse (note 1) t c = 25 c pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value 2500 20 400 800 400 800 3400 ?0 ~ +150 ?0 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 v v a a a a w c c v n m n m n m kg collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass collector current emitter current symbol item conditions unit ratings v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 1250v, i c = 400a, v ge = 15v v cc = 1250v, i c = 400a v ge1 = v ge2 = 15v r g = 7.5 ? resistive load switching operation i e = 400a, v ge = 0v i e = 400a die / dt = ?00a / s junction to case, igbt part (per 1/2 module) junction to case, fwdi part (per 1/2 module) case to fin, conductive grease applied (per 1/2 module) i c = 40ma, v ce = 10v i c = 400a, v ge = 15v (note 4) v ce = 10v v ge = 0v 5 0.5 4.16 1.00 2.00 2.00 1.00 3.77 1.20 0.036 0.072 ma a nf nf nf c s s s s v s c k/w k/w k/w 3.20 3.60 40 4.4 1.3 1.8 2.90 85 0.016 6.0 4.5 7.5 collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge contact thermal resistance min typ max i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) electrical characteristics (tj = 25 c) symbol parameter conditions v ge(th) v ce(sat) limits unit note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. thermal resistance hvigbt (high voltage insulated gate bipolar transistor) modules
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM400DY-50H high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules performance curves output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) free-wheel diode forward characteristics ( typical ) emitter current i e ( a ) emitter-collector voltage v ec ( v ) collector-emitter saturation voltage characteristics ( typical ) 05 4 3 2 1 10 2 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 t j =25 c 800 400 200 0 10 0 2468 600 t j =25 c v ge =13v v ge =12v v ge =11v v ge =10v v ge =9v v ge =8v v ge =7v v ge =14v v ge =15v v ge =20v 0 5 4 3 2 1 0 200 400 600 800 v ge =15v t j = 25 c t j = 125 c 800 400 200 0 600 20 0481216 v ce =10v t j = 25 c t j = 125 c collector-emitter saturation voltage v ce(sat) ( v ) 020 16 12 8 4 10 8 6 4 2 0 collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) t j = 25 c i c = 400a i c = 800a i c = 160a 10 0 23 10 1 5710 0 23 5710 1 23 5710 2 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 capacitance vs. v ce ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) c ies c oes c res v ge = 0v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM400DY-50H high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules 4000 3000 0 1000 2000 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 3 2 10 0 5 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 t d(off) v cc = 1250v, v ge = 15v r g = 7.5 ? , t j = 125 c inductive load t d(on) t r t f half-bridge switching characteristics ( typical ) switching times ( s ) collector current i c ( a ) v cc = 1250v, t j = 125 c inductive load v ge = 15v, r g = 7.5 ? t rr i rr reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) 7 5 3 2 10 1 7 5 3 2 10 2 10 1 10 3 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 single pulse t c = 25 c r th(j c) = 0.036k/ w (per 1/2 module) transient thermal impedance characteristics ( igbt part ) normalized transient thermal impedance z th(j c) time ( s ) 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 normalized transient thermal impedance z th(j c) time ( s ) transient thermal impedance characteristics ( fwdi part ) 20 16 12 8 4 0 v ge ?gate charge ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) v cc = 1250v i c = 400a single pulse t c = 25 c r th(j c) = 0.072k/ w (per 1/2 module)
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